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Ordering number:EN4698
FP215
PNP Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp, Differential Amp Applications
Features
* Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. * The FP215 is formed with two chips, being equivalent to the 2SA1724, placed in one package. * Excellent in thermal equilibrium and pair capability. Electrical Connection
1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) (Top view)
Package Dimensions
unit:mm 2108A
[FP215]
1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg
Mounted on ceramic board (250mm2x0.8mm) 1 unit Mounted on ceramic board (250mm2x0.8mm)
Conditions
Ratings -30 -20 -3 -300 -600 0.75 1.0 150 -55 to +150
Unit V V V mA mA W W
C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance C-E Saturation Voltage B-E Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 hFE1 (small-large) VBE (large-small) fT Cob Cre VCE(sat) VBE(sat) VCB=-20V, IE=0 VEB=-2V, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-3000mA VCE=-5V, IC=-50mA VCE=-5V, IC=-100mA VCE=-5V, IC=-50mA VCB=-10V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA 15 5 0.6 0.93 3.0 1.5 4.9 4.4 -0.4 -0.9 -1.0 -1.2 25 mV GHz pF pF V V Conditons Ratings min typ max -0.1 -1.0 100 Unit A A
Note:The specifications shown above are for individual transistor. However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors. Marking:215
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3
FP215
No.4698-2/3
FP215
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.4698-3/3

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